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  mar.2002 sink sens out 2 out 1 temp gnd v cc f o th e2 c2e1 c1 rg in ci v nc c n1 s nr f no v n1 v pc c p1 f po s pr v p1 sr rref rfo amp sink sens out 2 out 1 temp gnd v cc f o rg in ci sr rfo amp terminal code 1. v n1 2. s nr 3. c n1 4. v nc 5. f no 1. v p1 2. s pr 3. c p1 4. v pc 5. f po c d u a b r e q q pn g s nuts - 3 typ. f h j v l m k k k t - 4 typ. w sq. pin (10 places) x (2 places) y description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features:  complete output power circuit  gate drive circuit  protection logic short circuit over temperature under voltage applications:  inverters  ups  motion/servo control  power supplies ordering information: example: select the complete part number from the table below -i.e. PM400DVA060 is a 600v, 400 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 400 60 dimensions inches millimeters a 4.72 120.0 b 2.76 70.0 c 1.14 +0.04/-0.02 29.0 +1.0/-0.5 d 4.17 0.010 106.0 0.25 e 2.20 0.010 56.0 0.25 f 1.52 38.5 g 0.16 4.0 h 0.16 4.01 j 0.40 10.16 k 0.55 14.0 l 1.02 26.0 m 0.45 11.5 dimensions inches millimeters n 0.12 3.0 p 1.50 38.0 q 0.98 25.0 r 0.37 9.3 s m6 metric m6 t 0.26 dia. dia. 6.5 u 0.72 18.3 v 0.10 2.54 w 0.025 sq 0.64 sq x 0.14 dia. 3.5 dia. y 1.10 28.0 mitsubishi intelligent power modules PM400DVA060 flat-base type insulated package outline drawing and circuit diagram
mar.2002 mitsubishi intelligent power modules PM400DVA060 flat-base type insulated package absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m6 mounting screws 3.92~5.88 n m mounting torque, m6 main terminal screws 3.92~5.88 n m module weight (typical) 510 grams supply voltage (applied between c1-e2) v cc(surge) 500 volts supply voltage protected by sc (v d = 13.5 ~16.5v, inverter part, t j = 125 c start) v cc(prot.) 400 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v p1 -v pc , v n1 -v nc )v d 20 volts input voltage (applied between c p1 -v pc , v n1 -v nc )v cin 10 volts fault output supply voltage (applied between f po -v pc , f no -v nc )v fo 20 volts fault output current (sink current at f po , f no terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 5v) v ces 600 volts collector current, (t c = 25 c) i c 400 amperes peak collector current, (t c = 25 c) i cp 800 amperes collector dissipation (t c = 25 c) p c 1033 watts
mar.2002 mitsubishi intelligent power modules PM400DVA060 flat-base type insulated package electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector short circuit trip level sc -20 c t j 125 c, v d = 15v 500 amperes short circuit current delay time t off(sc) v d = 15v 10 s over temperature protection ot trip level 111 118 125 c (v d = 15v, lower arm) ot r reset level 100 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts (-20 c t j 125 c) uv r reset level 12.5 volts circuit current i d v d = 15v, v cin = 5v, v n1 -v nc 27 38 ma v d = 15v, v cin = 5v, v p1 -v pc 27 38 ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) c p1 -v pc , c n1 -v nc 1.7 2.0 2.3 volts fault output current i fo(h) v d = 15v, v fo = 15v* 0.01 ma i fo(l) v d = 15v, v fo = 15v* 10 15 ma minimum fault output pulse width t fo v d = 15v* 1.0 1.8 ms sxr terminal output voltage v sxr t j 125 c, r in = 6.8k ? (s pr , s nr ) 4.5 5.1 5.6 volts * fault output is given only when the internal sc, ot, and uv protections circuits of either an upper-arm or a lower-arm device operate to protect it.
mar.2002 mitsubishi intelligent power modules PM400DVA060 flat-base type insulated package electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector-emitter cutoff current i ces v ce = v ces , v d = 15v, t j = 25 c 1.0 ma v ce = v ces , v d = 15v, t j = 125 c 10.0 ma fwdi forward voltage v ec -i c = 400a, v d = 15v, v cin = 5v 2.20 3.30 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 400a, 2.35 2.80 volts pulsed, t j = 25 c v d = 15v, v cin = 0v, i c = 400a, 2.55 3.05 volts pulsed, t j = 125 c inductive load switching times t on 0.4 0.8 2.1 s t rr v d = 15v, v cin = 0 ? 5v 0.2 0.3 s t c(on) v cc = 300v, i c = 400a, 0.3 1.1 s t off t j = 125 c 1.8 2.9 s t c(off) 0.6 1.2 s thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each inverter igbt 0.121 c/watt r th(j-c)f each inverter fwdi 0.18 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.081 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across c1-e2 terminals 400 volts v ce(surge) applied across c1-e1, c2-e2 terminals 500 volts v d applied between 15 1.5 volts v p1 -v pc , v n1 -v nc * input on voltage v cin(on) applied between 0.8 volts input off voltage v cin(off) c p1 -v pc , c n1 -v nc 4.0 volts arm shoot-through blocking time t dead for ipm's each input signal 3.0 s * with ripple satisfying the following conditions, dv/dt swing 5v/ s, variation 2v peak to peak.
mar.2002 mitsubishi intelligent power modules PM400DVA060 flat-base type insulated package collector current, i c , (amperes) collector-emitter voltage, v ce(sat) , (volts) saturation voltage characteristics (typical) 0 200 400 600 1.0 0 v d = 15v v cin = 0v 2.0 3.0 control supply voltage, v d , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturaton voltage characteristics (typical) 0141822 1.0 0 2.0 3.0 t j = 25 c t j = 125 c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 1.0 2.0 3.0 200 0 v d = 17v 13 400 600 15 collector current, i c , (amperes) switching times, t on , t off , ( s) switching time vs. collector current (typical) 10 1 10 2 10 3 10 4 10 0 10 -1 t on t off t j = 25 c t j = 125 c collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( s) switching time vs. collector current (typical) 10 0 10 1 10 2 10 3 10 -1 10 -2 v cc = 300v v d = 15v inductive load t j = 25 c t j = 125 c t c(on) t c(off) collector current, i c , (amperes) switching energy, p sw(on) , p sw(off) , (mj/pulse) switching loss characteristics (typical) 10 2 10 1 10 2 10 3 10 0 10 1 10 -1 p sw(off) p sw(on) v cc = 300v v d = 15v inductive load t j = 25 c t j = 125 c collector current, i e , (amperes) reverse recovery time, t rr , ( s) reverse recovery current vs. collector current (typical) 10 1 10 1 10 2 10 3 10 -1 10 -2 i rr t rr v cc = 300v v d = 15v inductive load t j = 25 c t j = 125 c 10 4 10 2 10 1 reverse recovery current, i rr , (amperes) 10 0 10 3 emitter-collector voltage, v ec , (volts) emitter current, i e , (amperes) diode forward characteristics 10 3 10 2 10 1 10 0 t j = 25 c t j = 125 c v d = 15v v cin = 15v 0 1.0 2.0 3.0 carrier frequency, f c , (khz) circuit current, i d , (ma) circuit current vs. carrier frequency 0102030 50 0 v d = 15v 100 150 t j = 25 c t j = 25 c t j = 125 c i c = 400a v cin = 0v t j = 25 o c v cin = 0v v cc = 300v v d = 15v inductive load
mar.2002 mitsubishi intelligent power modules PM400DVA060 flat-base type insulated package control supply voltage, v d, (volts) short circuit current trip level, (v d = 15v) = 1.0 over current trip level vs. supply voltage (typical) 0131517 0.8 0 1.0 1.2 t j = 25 c junction temperature, t j , ( c) short circuit current trip level, (t j = 25 c) = 1.0 over current trip level temperature dependency (typical) 20 -60 100 180 0.8 0 1.0 1.2 v d = 15v junction temperature, t j , ( c) fault output pulse width trip level, t fo (t j = 25 c) = 1.0 fault output pulse width vs. temperature (typical) 20 -60 100 180 0.8 0 1.0 1.2 v d = 15v junction temperature, t j , ( c) supply circuit under voltage protection trip reset level, uv t , uv r , (volts) control supply voltage trip-reset level temperature dependancy (typical) 20 100 180 11 0 13 15 v d = 15v uv t uv r -60 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 10 -2 10 -3 single pulse standard value = r th(j-c)q = 0.121 c/w time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 10 -2 10 -3 single pulse standard value = r th(j-c)f = 0.18 c/w


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